vishay siliconix si1902dl document number: 71080 s-51415?rev. h, 01-aug-05 www.vishay.com 1 dual n-channel 20-v (d-s) mosfet features trenchfet ? power mosfets: 2.5-v rated product summary v ds (v) r ds(on) ( ? )i d (a) 20 0.385 @ v gs = 4.5 v 0.70 0.630 @ v gs = 2.5 v 0.54 markin g cod e pa x x x l o t t yy y sot-363 sc-70 (6-leads) 6 4 1 2 3 5 to p vie w s 1 g 1 d 2 d 1 g 2 s 2 yy part # code marking code pa lot traceability and date code notes a. surface mounted on 1? x 1? fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply absolute maximum ratings t a = 25c, unless otherwise noted parameter symbol 5 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 12 continuous drain current (t j = 150c) a t a = 25c i d 0.70 0.66 a t a = 85c 0.50 0.48 pulsed drain current i dm 1.0 continuous source current (diode conduction) a i s 0.25 0.23 maximum power dissipation a t a = 25c p d 0.30 0.27 w t a = 85c 0.16 0.14 operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 sec r thja 360 415 c/w steady state 400 460 maximum junction-to-foot (drain) steady state r thjf 300 350 available pb-free rohs* compliant
www.vishay.com 2 document number: 71080 s-51415?rev. h, 01-aug-05 vishay siliconix si1902dl notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25c, unless otherwise noted parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a v ds = 16 v gs = 0 v, t j = 85c 5 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 1.0 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 0.66 a 0.320 0.385 ? v gs = 2.5 v, i d = 0.40 a 0.560 0.630 forward transconductance a g fs v ds = 10 v, i d = 0.66 a 1.5 s diode forward voltage a v sd i s = 0.23 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 0.66 a 0.8 1.2 nc gate-source charge q gs 0.06 gate-drain charge q gd 0.30 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 20 ? i d ? 0.5 a, v gen = 4.5 v, r g = 6 ? 10 20 ns rise time t r 16 30 turn-off delaytime t d(off) 10 20 fall time t f 10 20 source-drain reverse recovery time t rr i f = 0.23 a, di/dt = 100 a/s 20 40 typical characteristics t a = 25c, unless otherwise noted output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thru 2.5 v 2 v v ds ? drain-to-source voltage (v) ? drain current (a) i d 1.5 v 1 v transfer characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 t c = 125 c ?55 c 25 c v gs ? gate-to-source voltage (v) ? drain current (a) i d
document number: 71080 s-51415?rev. h, 01-aug-05 www.vishay.com 3 vishay siliconix si1902dl typical characteristics t a = 25c, unless otherwise noted on-resistance vs. drain current gate charge surge-drain diode forward voltage ? on-resistance ( r ds(on) ? ) 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 i d ? drain current (a) v gs = 2.5 v v gs = 4.5 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 v ds = 10 v i d = 0.66 a ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 1 0.1 v sd ? source-to-drain volta g e ( v ) ? source current (a) i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 20 40 60 80 100 0 4 8 121620 v ds ? drain-to-source voltage (v) c rss c oss c iss c ? capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 ?50 ?25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 0.66 a t j ? junction temperature ( c) (normalized) ? on-resistance r ds(on) 0.0 0.2 0.4 0.6 0.8 1.0 01234 5 i d = 0.66 a ? on-resistance ( r ds(on) ? ) v gs ? gate-to-source voltage (v)
www.vishay.com 4 document number: 71080 s-51415?rev. h, 01-aug-05 vishay siliconix si1902dl typical characteristics t a = 25c, unless otherwise noted threshold voltage ?0.4 ?0.3 ?0.2 ?0.1 ?0.0 0.1 0.2 ?50 ?25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j ? temperature ( c) single pulse power, junction-to-ambient 0 30 50 10 20 power (w) time ( sec ) 40 1 100 600 10 10 ?1 10 ?2 10 ?3 normalized thermal transient impedance, junction-to-ambient 10 ?3 10 ?2 1 10 600 10 ?1 10 ?4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja =400 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
vishay semiconductors si1902dl document number: 71080 s-51415?rev. h, 01-aug-05 www.vishay.com 5 vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?71080 . typical characteristics t a = 25c, unless otherwise noted normalized thermal transient impedance, junction-to-foot 10 ?3 10 ?2 110 10 ?1 10 ?4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance
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